high voltage mosfet d (tab) 98809b (01/06) g d s ? 2006 ixys all rights reserved n-channel, depletion mode v dss = 1000 v i d25 = 100 ma r ds(on) = 110 features z normally on mode z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z fast switching speed applications z level shifting z triggers z solid state relays z current regulators ixtp 01n100d ixtu 01n100d ixty 01n100d preliminary data sheet to-220 (ixtp) pins: 1 - gate 2 - drain 3 - source tab - drain to-251 (ixtu) d s g d (tab) to-252 (ixty) g s d (tab) symbol test conditions maximum ratings v dsx t j = 25c to 150c 1000 v v dgx t j = 25c to 150c 1000 v v gs continuous 20 v v gsm transient 30 v i dss t c = 25c; t j = 25c to 150c 100 ma i dm t c = 25c, pulse width limited by t j 400 ma p d t c = 25c 25 w t a = 25c 1.1 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c t isol plastic case for 10 s (ixtu) 300 c m d mounting torque to-220 1.3 / 10 nm/lb. weight to-220 4 g to-251 0.8 g to-252 0.8 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dsx v gs = -10 v, i d = 25 a 1000 v v gs(off) v ds = 25v, i d = 25 a -2.5 -5 v i gss v gs = 20 v dc , v ds = 0 100 na i dsx(off) v ds = v dsx , v gs = -10 v 10 a t j = 125 c 250 a r ds(on) v gs = 0 v, i d = 50 ma note 1 90 110 i d(on) v gs = 0 v, v ds = 25v note 1 100 ma
ixys reserves the right to change limits, test conditions, and dimensions. ixtp 01n100d symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 50 v; i d = 100 ma note1 100 150 ms c iss 120 pf c oss v gs = -10 v, v ds = 25 v, f = 1 mhz 25 pf c rss 5pf t d(on) v ds = 100 v v, i d = 50 ma 8 n s t r v gs = 0 v to -10 6 n s t d(off) r g = 30 (external) 30 n s t f 51 ns r thjc 5 k/w r thcs to-220 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v sd v gs = -10 v, i f = 100 ma note1 1.0 1.5 v t rr i f = 0.75 a, -di/dt = 10 a/ s, 1.5 s v ds = 25 v, v gs = -10v note1: pulse test, t 300 s, duty cycle d 2 % to-252 aa outline dim. millimeter inches min. max. min. max. a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 a2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.32 5.21 0.170 0.205 e 6.35 6.73 0.250 0.265 e1 4.32 5.21 0.170 0.205 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.40 10.42 0.370 0.410 l 0.51 1.02 0.020 0.040 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 2.54 2.92 0.100 0.115 pins: 1 - gate 2 - drain 3 - source tab - drain pins: 1 - gate 2 - drain 3 - source tab - drain to-220 ad outline dim. millimeter inches min. max. min. max. a 2.19 2.38 .086 .094 a1 0.89 1.14 0.35 .045 b 0.64 0.89 .025 .035 b1 0.76 1.14 .030 .045 b2 5.21 5.46 .205 .215 c 0.46 0.58 .018 .023 c1 0.46 0.58 .018 .023 d 5.97 6.22 .235 .245 e 6.35 6.73 .250 .265 e 2.28 bsc .090 bsc e1 4.57 bsc .180 bsc h 17.02 17.78 .670 .700 l 8.89 9.65 .350 .380 l1 1.91 2.28 .075 .090 l2 0.89 1.27 .035 .050 l3 1.15 1.52 .045 .060 to-251 aa outline pins: 1 - gate 2 - drain 3 - source tab - drain ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
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